| PART |
Description |
Maker |
| NT5CB128M16HP |
2Gb DDR3 SDRAM H-Die
|
Nanya
|
| K4B2G1646C |
2Gb C-die DDR3 SDRAM
|
Samsung semiconductor
|
| HMT351S6CFR8A HMT351S6CFR8A-G7 HMT351S6CFR8A-H9 HM |
DDR3L SDRAM Unbuffered SODIMMs Based on 2Gb C-die
|
Hynix Semiconductor
|
| HMT42GR7CMR4C-G7 HMT351R7CFR4C-H9 HMT42GR7CMR4C-H9 |
DDR3 SDRAM Registered DIMM Based on 2Gb C-die
|
Hynix Semiconductor
|
| HMT351R7CFR4A-PB HMT351R7CFR8A-PB HMT42GR7CMR4A-H9 |
DDR3L SDRAM Registered DIMM Based on 2Gb C-die
|
Hynix Semiconductor
|
| HMT325A7CFR8A HMT325A7CFR8A-G7 HMT325A7CFR8A-H9 HM |
DDR3L SDRAM ECC SO-DIMMs Based on 2Gb C-die
|
Hynix Semiconductor
|
| HMT351U7EFR8A-PB HMT351U7EFR8A-H9 HMT325U7EFR8A HM |
DDR3L SDRAM Unbuffered DIMMs Based on 2Gb E-Die
|
Hynix Semiconductor
|
| W3EG2128M72AFSR265D3XG |
2GB - 2x128Mx72 DDR SDRAM REGISTERED ECC, w/PLL, FBGA 2GB 2x128Mx72 ECC的DDR SDRAM的注册，瓦特/锁相环，FBGA封装
|
Murata Manufacturing Co., Ltd.
|
| M393B1K73CH0 |
240pin Registered DIMM based on 2Gb C-die
|
Samsung semiconductor
|
| K4H560838E-TC/LB0 K4H560838E-TC/LA2 K4H560838E-TC/ |
DDR SDRAM 256Mb E-die (x4, x8) 256Mb的DDR SDRAM的电子芯片（了x4，x8
Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-PDIP -40 to 125
256Mb E-die DDR SDRAM Specification 66 TSOP-II
Dual Micropower Precision Low-Voltage Operational Amplifier 8-SOIC -55 to 125
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PLCC
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PDIP
DDR SDRAM 256Mb E-die (x4, x8)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| H5TQ2G63DFR-XXC H5TQ2G63DFR-XXI H5TQ2G83DFR-XXI |
2Gb DDR3 SDRAM
|
Hynix Semiconductor
|
| H5TQ2G63FFRG7L H5TQ2G63FFRH9I H5TQ2G63FFRH9J H5TQ2 |
2Gb DDR3 SDRAM
|
Hynix Semiconductor
|
